鍺Ge單晶參數(shù)
| 生長(zhǎng)方法/Growth Method | VGF | |
| 摻雜類型/Dopant | P型：鎵/p-type:Ga | N型：砷/n-type:As |
| 晶片型狀/Wafer Shape | 圓形（尺寸2"、3"、4"、6”）/Round(DIA2"、3、4"、6") | |
| 晶向/Surface Orientation | (100)±0.5°(111)±0.5° | |
其他晶向要求可根據(jù)客戶需求加工/*Other Orientations maybe available upon request | ||
| 電阻率/Resistivity (Q.cm) | 根據(jù)客戶要求/As Required | |
位錯(cuò)/Etch Pitch Density (cm2) | ≤5000，≤500 | |
| 厚度/Thickness (um) | 175或500+25 或根據(jù)客戶要求 | |
| 總厚度變化/TTV[P/P](um) | ≤10 | |
| 翹曲/WARP(um ) | ≤15 | |
| 參考邊/OFF(mm) | 32.5±1 | |
| If needed by customer根據(jù)客戶需要 | ||
主面拋光/Surface | E/E, P/E, P/G | |